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KX-TCD951EB/KX-TCD955EC
R ef . N o.
Part N o.
Pc s
Base Unit
N otes :
1. The m ark ing (R TL) indicat es t hat the R etention Tim e is lim ited f or this item .
PC B1
PQW PTC D 951EH P. C .BOAR D ASS'Y (R TL)
1
Af ter the discontinuation of this as sem bly in production, t he item will
(F OR KX-TC D 951EB)
c ont inue to be av ailable f or a s pec if ic period of tim e. The retention period
PC B1
PQW PTC D 955EH P. C .BOAR D ASS'Y (R TL)
of av ailability is dependent on the ty pe of assem bly , and in acc ordanc e
(F OR KX-TC D 955EC )
with the laws gov erning part and product retention. Af ter the end of this
period, t he ass em bly will no longer be av ailable.
2. Im portant saf et y notic e.
(IC S)
C om ponents identif ied by the m ark spec ial c haract eris tic s im portant
IC 1
PQVI TLP160G
IC
1
f or saf et y .
IC 2
PQVI PC 357C N IC
1
W hen replac ing any of these com ponents , us e only m anuf ac turer's specif ied
IC 6
PQVI MC 295130 IC
1
parts.
IC 7
PQVI LM1117MP IC
1
3. The S m ark indicates s erv ice standard parts and m ay dif f er f rom production
parts.
IC 101
PQVI N S14424V IC
1
4. R ESISTOR S & C APAC ITOR S
IC 102
PQVI SST2910A
IC
1
U nles s otherwis e s pec if ied.
IC 103
PQVI N M4C 16LE IC
1
All res istors are in ohm s (
Ω
) k=1000
Ω
, M=1000k
Ω
All capac itors are in MIC R O F AR AD S(
µ
F ) P=
µµ
F
*Ty pe &W at tage of R esis tor
(TR AN SI STOR S)
Ty pe
T1
PQVTBC 848BT7 TR AN SISTOR (SI)
1
ER C : Solid
ER X: Met al F ilm
PQR D :C arbon
T8
2SA1807N T
TR AN SISTOR (SI)
1
ER D : C arbon
ER G: Metal Oxide
PQR Q:F use
T9
PQVTBF 822T7
TR AN SISTOR (SI)
1
PQ4R :C hip
ER O: Metal F ilm
ER F : W ire W ound
W attage
T11
PQVTBC 848BT7 TR AN SISTOR (SI)
1
10,16,18:1/8W
14,25,S2:1/4W
12,50,S1:1/2W
1: 1W
2:2W
5:5W
T12
PQVTBC 858BT7 TR AN SISTOR (SI)
1
T14
2SD 601A
TR AN SISTOR (SI)
1
EC F D :Sem i-C onductor
EC C D ,EC KD ,PQC BC ,PQVP : C eram ic
T15
2SD 1664Q
TR AN SISTOR (SI)
1
EC QS:Sty rol
EC QM,EC QV,EC QE,EC QU , EC QB : Poly ester
T16
2SA1037K
TR AN SISTOR (SI)
1
PQC BX,EC U V: C hip
EC EA,EC SZ ,EC OS : Electroly tic
EC MS:Mica
EC QP : Poly propy lene
T101
PQVTBC 80825T TR AN SISTOR (SI)
S
1
Voltage
T102
U N 521
TR AN SISTOR (SI)
S
1
EC Q Ty pe
EC QG
EC SZ Ty pe
Others
T103
U N 521
TR AN SISTOR (SI)
EC QV Ty pe
(F OR KX-TC D 955EC )
1H : 50V
05: 50V
OF :3.15V
OJ :6.3V
1V :35V
2A:100V
1:100V
1A:10V
1A :10V
50,1H :50V
2E:250V
2:200V
1V:35V
1C :16V
1J :63V
(D IOD ES)
2H :500V
OJ:6.3V
1E,25:25V
2A :100V
D 2
PQVD BZ V55C 27 D IOD E(SI)
S
1
D 3
PQVD BZ V55C 27 D IOD E(SI)
S
1
D 4
MA110
D IOD E(SI)
1
R ef . N o.
Part N o.
Part N am e & D esc ript ion
Pcs
D 8
PQVD S1Z B40F 1 D IOD E(SI)
S
1
C ABI N ET AN D ELEC TR I C AL PAR TS
D 10
MA1Z 300
D IOD E(SI)
1
D 11
MA112
D IOD E(SI)
1
1
PQBC 10270Z 1
BU TTON
S
D 12
LN J211R 8AR U LED
1
2
PQH R 10648Z
LED LEN S
D 13
MA8180
D IOD E(SI)
1
(F OR KX-TC D 951EB)
2
PQH R 10648Y
LED LEN S
S
D 101
MA110
D IOD E(SI)
1
(F OR KX-TC D 955EC )
D 102
LN J311G8TR U LED
1
3
PQJT10146Z
C H AR GE TER MIN AL
D 103
LN J311G8TR U
4
PQKM10369Z 1
U PPER C ABIN ET
S
D 104
PQVD H VU 359 D IOD E(SI)
1
(F OR KX-TC D 951EB)
D 105
MA8047
D IOD E(SI)
1
4
PQKM10369X2
U PPER C ABIN ET
(F OR KX-TC D 955EC )
5
PQSA10078Z
AN TEN N A
(VAR ISTOR )
6
PQSA10079Z
AN TEN N A
SA3
PQVD D SS301L VAR I STOR
1
7
PQSX10099Z
KEY BOAR D SW ITC H
8
PQY F 10146Z 1
LOW ER C ABIN ET
S
(F OR KX-TC D 951EB)
(J AC KS)
8
PQY F 10146Z 2
LOW ER C ABIN ET
J1
PQJJ 1T018Z
JAC K
1
(F OR KX-TC D 955EC )
J2
PQJJ 1T019Z
JAC K
1
9
PQGT13615Z
N AME PLATE
(F OR KX-TC D 951EB)
9
PQGT13617Z
N AME PLATE
(C R Y STAL OSC ILLATOR )
(F OR KX-TC D 955EC )
X101
PQVC F 1036N 4Z C R Y STAL OSC ILLATOR
1
(BU Z Z ER )
BU Z 101
PQEF BD B111GP BU Z Z ER
1
1
1
1
1
1
1
1
1
1
1
1
1
1
MAIN P. C .BOAR D PAR TS
Part N am e & D esc ript ion & Value
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