Read LG 42LV555H (CHASSIS:LA05E) Service Manual online
THE SYMBOL MARK OF THIS SCHEMETIC DIAGRAM INCORPORATES
SPECIAL FEATURES IMPORTANT FOR PROTECTION FROM X-RADIATION.
FILRE AND ELECTRICAL SHOCK HAZARDS, WHEN SERVICING IF IS
ESSENTIAL THAT ONLY MANUFATURES SPECFIED PARTS BE USED FOR
THE CRITICAL COMPONENTS IN THE SYMBOL MARK OF THE SCHEMETIC.
SPECIAL FEATURES IMPORTANT FOR PROTECTION FROM X-RADIATION.
FILRE AND ELECTRICAL SHOCK HAZARDS, WHEN SERVICING IF IS
ESSENTIAL THAT ONLY MANUFATURES SPECFIED PARTS BE USED FOR
THE CRITICAL COMPONENTS IN THE SYMBOL MARK OF THE SCHEMETIC.
0 . 1 u F
16V
16V
C1610
OPT
GND
MLB-201209-0120P-N2
L1613
+D_1.8V
AZ1117H-1.8TRE1(EH13A)
IC1605
AAC
2
OUTPUT
3
INPUT
1
ADJ/GND
0 . 1 u F
16V
16V
C1628
OPT
MLB-201209-0120P-N2
L1601
10K
R1621
MLB-201209-0120P-N2
L1600
BLM18PG121SN1D
L1605
0
R1614
10
R1610
910K
1%
1%
R1626
0 . 1 u F
C1607
2uH
L1602
0 . 1 u F
C1608
THERMAL
MP2208DL-LF-Z
EAN60911601
DEV
IC1603
3
PGND_1
2
SS
4
SW_1
1
AGND
6
NC
5
IN_1
7
BS
8
VCC
9
POK
10
IN_2
11
SW_2
12
PGND_2
13
EN/SYNC
14
FB
15
EP
0 . 1 u F
C1616
30K
1%
R1624
470K
1%
R1615
0
R1623
100K
R1605
0 . 1 u F
C1626
0 . 1 u F
16V
C1635
+D_1.2V
+A_1.2V
+1.2V_BCM_EN
5:O17
+3.5V
47K
R1625
15K
1% BCD
1% BCD
R1606-*1
39K
1%SEMTECH
1%SEMTECH
R1606
THERMAL
AP2132MP-2.5TRG1
BCD
IC1602
3
VIN
2
EN
4
VCTRL
1
PG
5
NC
6
VOUT
7
ADJ
8
GND
9
[ E P ]
4.7K
1%
1%
BCD
R1604-*1
0 . 1 u F
OPT
C1604
10K
BCD
R1601
10K
SEMTECH
R1602
0 . 1 u F
OPT
C1603
10K
BCD
R1603
0 . 1 u F
C1611
OPT
0 . 1 u F
C1602
18K
1%
1%
SEMTECH
R1604
+3.3V
SC4215ISTRT
IC1602-*1
SEMTECH
3
VIN
2
EN
4
NC_2
1
NC_1
5
NC_3
6
VO
7
ADJ
8
GND
+2.5V
+5V_DEVICE
+3.5V_ST
3300pF
50V
DEV
C1639
100pF
50V
OPT
C1641
10K
1%
R1630
1/10W
10K
1%
R1629
0 . 0 1 u F
25V
25V
C1638
0.01uF
25V
C1637
NR8040T3R6N
3.6uH
L1615
10K
R1628
0 . 1 u F
C1643
0 . 0 1 u F
25V
25V
C1640
6.8K
R1627
MP2108DQ
EAN60991601
DEV
IC1606
3
LX
2
VIN
4
PGND
1
BST
5
SGND
6
SS
7
FB
8
COMP
9
VREF
10
RUN
+3.5V
+1.8V_DDR
MAIN_PWR_ON
5 : O 1 8 ; 4 : B 2 6
+3.5V_ST
XMARK_1.8V
BLM18PG121SN1D
L1604
XMARK
NFM18PS105R0J
6.3V
C1612
OUT
IN
GND
AP1117E18G-13
I C 1 6 0 5 - * 1
DIODES
2
OUT
3
IN
1
ADJ/GND
AZ1117BH-1.8TRE1
I C 1 6 0 5 - * 2
BCD
2
OUT
3
IN
1
ADJ/GND
C1614
OUT
IN
GND
10uF
6.3V
C1601
10uF
6.3V
C1605
OPT
22uF
6.3V
C1606
22uF
6.3V
6.3V
C1609
22uF
6.3V
6.3V
C1613
1uF
6.3V
6.3V
C1617
22uF
C1620
OPT
22uF
6.3V
C1630
22uF
6.3V
6.3V
C1636
22uF
6.3V
C1642
22uF
6.3V
C1634
22uF
6.3V
6.3V
C1632
22uF
6.3V
C1633
BCD
L1603
L1614
* D_1.8V
* +1.8V_DDR for DDR/ BCM3549
1.8V_DDR_BCM3549P
POWER_ST5V
16
R2
V o u t = 0 . 8 * ( 1 + R 1 / R 2 )
R1
B C M c o r e 1 . 2 V v o l t
MAX 3.1A
VOUT : 2.533V
R2
VOUT : 2.566V
S C 4 2 1 5 V o u t = 0 . 8 * ( 1 + R 1 / R 2 )
R1
A2.5V
AP2132 Vout=0.6*(1+R1/R2)
32/37/42LD660H-UA
18
2 0 1 0 . 1 0 . 1 1
Placed on SMD-TOP
C IN
3A
Vout=0.9*(1+R1/R2)
Placed on SMD-TOP
R e p l a c e d P a r t
R2
R1
Max 1100 mA
CLOSE TO LG1001
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