Read Harman Kardon MAS 101-102-111 (serv.man2) Service Manual online
DMP3020LSS
Document number: DS31263 Rev. 4 - 2
www.diodes.com
May 2008
© Diodes Incorporated
DMP3020LSS
N
EW P
RO
D
U
C
T
SINGLE P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
•
Low On-Resistance
•
•
14mΩ @ V
GS
= -10V
•
25mΩ @ V
GS
= -4.5V
•
Low Gate Threshold Voltage
•
Low Input Capacitance
•
Fast Switching Speed
•
Low Input/Output Leakage
•
Lead Free By Design/RoHS Compliant (Note 2)
•
"Green" Device (Note 4)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
Case: SOP-8L
•
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
•
Moisture Sensitivity: Level 1 per J-STD-020D
•
Terminals Connections: See Diagram
•
Terminals: Finish - Matte Tin annealed over Copper lead
frame. Solderable per MIL-STD-202, Method 208
•
Marking Information: See Page 3
•
Ordering Information: See Page 3
•
Weight: 0.072g (approximate)
SOP-8L
S
D
D
G
D
D
S
S
TOP VIEW
Internal Schematic
TOP VIEW
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Value
Units
Drain-Source Voltage
V
DSS
-30
V
Gate-Source Voltage
V
GSS
±
20
V
Drain Current (Note 1) Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
-12
-6
A
Pulsed Drain Current (Note 3)
I
DM
-40
A
Thermal Characteristics
Characteristic Symbol
Value
Unit
Total Power Dissipation (Note 1)
P
D
2.5
W
Thermal Resistance, Junction to Ambient
R
θ
JA
50
°C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic Symbol
Min
Typ
Max
Unit
Test
Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Drain-Source Breakdown Voltage
BV
DSS
-30
⎯
⎯
V
V
GS
= 0V, I
D
= -250μA
Zero Gate Voltage Drain Current
I
DSS
⎯
⎯
-1
μ
A
V
DS
= -30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯
⎯
±
100
nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Gate Threshold Voltage
V
GS(th)
-1
⎯
-2
V
V
DS
= V
GS
, I
D
= -250μA
Static Drain-Source On-Resistance
R
DS (ON)
⎯
⎯
11.6
18.6
14
25
mΩ
V
GS
= -10V, I
D
= -8A
V
GS
= -4.5V, I
D
= -5A
Forward Transconductance
g
fs
⎯
12
⎯
S
V
DS
= -10V, I
D
= -12A
Diode Forward Voltage (Note 5)
V
SD
-0.5
⎯
-1.1
V
V
GS
= 0V, I
S
= -2A
DYNAMIC CHARACTERISTICS
Input Capacitance
Input Capacitance
C
iss
⎯
1655
⎯
pF
Output Capacitance
C
oss
⎯
286
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
240
⎯
pF
V
DS
= -20V, V
GS
= 0V
f = 1.0MHz
Notes: 1. Device mounted on 2 oz. Copper pads on FR-4 PCB with R
θ
JA
= 50°C/W.
2. No purposefully added lead.
3. Pulse width ≤10μS, Duty Cycle ≤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
9
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