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2005. 10. 26
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SEMICONDUCTOR
TECHNICAL DATA
2N7002K
N Channel MOSFET
ESD Protected 2000V
Revision No : 1
INTERFACE AND SWITCHING APPLICATION.
FEATURES
ESD Protected 2000V.
High density cell design for low R
DS(ON)
.
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capablity.
MAXIMUM RATING (Ta=25
)
DIM
MILLIMETERS
1. SOURCE
2. GATE
3. DRAIN
SOT-23
A
B
C
D
E
2.93 0.20
1.30+0.20/-0.15
0.45+0.15/-0.05
2.40+0.30/-0.20
G
1.90
H
J
K
L
M
N
0.95
0.13+0.10/-0.05
0.00 ~ 0.10
0.55
0.20 MIN
1.00+0.20/-0.10
M
J
K
E
1
2
3
H
G
A
N
C
B
D
1.30 MAX
L
L
P
P
P
7
+
_
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Drain-Source Breakdown Voltage
BV
DSS
V
GS
=0V, I
D
=10 A
60
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
=60V, V
GS
=0V
-
-
1
A
Gate-Body Leakage, Forward
I
GSSF
V
GS
=20V, V
DS
=0V
-
-
10
A
Gate-Body Leakage, Reverse
I
GSSR
V
GS
=-20V, V
DS
=0V
-
-
-10
A
G
D
S
Type Name
Marking
Lot No.
WC
EQUIVALENT CIRCUIT
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
V
DSS
60
V
Gate-Source Voltage
V
GSS
20
V
Drain Current
Continuous
I
D
300
mA
Pulsed
(Note 1)
I
DP
1200
Drain Power Dissipation
(Note 2)
P
D
300
mW
Junction Temperature
T
j
150
Storage Temperature Range
T
stg
-55
150
Note 1) Pulse Width
10
, Duty Cycle
1%
Note 2) Package mounted on a glass epoxy PCB(100mm
2
1mm)
Harman Kardon
AVR 171 Service Manual
Page 119 of 174
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